Defects Dynamics in Multilayer h-BN Resistive Switching Memories: A Molecular Dynamics Investigation

In this study we investigate the dynamics of defects in a multilayer h-BN, which is sandwiched between two Ni electrodes. The effects of different electric fields were studied using the Reax force field (Reaxff) and molecular dynamics simulation. It has been discovered that certain defects, such as Stone-Wales defects (SW) and multiple vacancies arising from nitrogen vacancies (VN) and boron vacancies (VB), play an important role in the formation of conductive filaments and bridges between layers. These bridges have a significant impact on the electrical and switching properties of multilayer h-BN.