Cryogenic Investigation of a 13 GHz Power Amplifier for Trapped-Ion Quantum Computer

This work presents an in-depth investigation of the cryogenic applicability of a power amplifier (PA) from simulative and operative viewpoint. A method is introduced for gaining circuit simulation insight below the typical qualified Process Design Kit's (PDK) temperature range down to 4.5 K. Based on this performance-loss compensation at cryogenic temperature is discussed. The analysis is validated with measurements of a 13 GHz PA for
${}^{171}\mathbf{Yb}^{+}$
qubit gate control at 4.5 K and 300 K respectively. The PA under test is intended for a microwave-driven trapped-ion-based qubit system and is fabricated in a
$0.13\ \mu\mathrm{m}$
SiGe BiCMOS process.