Resonant Terahertz Bolometric Detectors Using Plasmonic Response in Graphene-Channel FETs with b-P/h-BN Gate Barrier Layers

We propose and model the terahertz bolometric detectors based on the graphene-channel field-effect transistors (GC-FETs) with the black-Phosphorus/hexagonal-Boron Nitride (b-P/h-BN) barrier layers. The GC is encapsulated in h-BN with a narrow b-P window (collector window) in the gate layer. The proposed device structure enables decreased electron scattering due to the elevated quality of the interfaces and promotes a more pronounced plasmonic response of the two-dimensional electron system in the GC. This improves the THz detector performance at the plasmonic resonances. Narrowing the collector window diminishes the Peltier effect and improves the detector characteristics.