An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement

An extraction method to obtain the noise model parameter
$T_{\mathrm { d}}$
in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for
$16\times 1\times 2{{\mu }\rm m}$
(number of gate fingers
$\times $
unit gatewidth
$\times $
cells) gatelength MOSFETs.