A radiation-hardened 20T SRAM Cell with high reliability and low power consumption

As CMOS process sizes continue to shrink, static randomized memory (SRAM) cells have become very sensitive to the charge generated by high-energy radiation particles, making them more susceptible to Single Event Upsets(SEUs). In this paper, a highly reliable and low-power radiation hardened 20T SRAM (RH-20T) cell is proposed. RH-20T is able to recover from single-node upsets (SNU) at all sensitive nodes, and also the structure has ten node pairs for self-recovery from double-node upsets(DNU). Simulation results demonstrate its advantages in terms of reliability and power consumption over typical existing radiation-hardened SRAM cell designs, such as ZHANG14T, QUCCE12T, RHMD10T, SEA14T, SCCS, S4P8N, S8P4N, DNUSRM, SESRS and CC18T, the RH-20T achieves an average power consumption reduction of 44.61%, and an average write access time (WAT) reduction of 19.78%.