The properties of SiPM signal with passive quenching

The Silicon Photomultiplier (SiPM) is an advanced photon detector consisting of multiple Single Photon Avalanche Diodes (SPADs) connected in parallel, with each SPAD equipped with quenching elements. When photons arrive, SPADs trigger avalanches, generating a substantial number of charge carriers. These carriers encounter impedance from the quenching elements, leading to their accumulation in the depletion layer and reduction of its electric field, thus terminating the avalanche process. After quenching, the quenching elements restrict the charge carriers from exiting the device, thereby shaping the single-photon response signal. This study employs transient simulations of passive quenching circuits in SiPMs with varied quenching elements to investigate the impact of the quenching element parameter selection on the SiPM output signal characteristics.