Temporal Response of GaAs:Cr X-ray Detector Under Intense Irradiation

This study focuses on the temporal response of chromium-compensated gallium arsenide (GaAs:Cr) [1] under different X-ray fluxes. GaAs: Cr could be manufactured with mature technology and is regarded as a promising material used for detector in a photon counting CT (PCCT) due to its high electron mobility, high resistivity, and low cost. A common problem faced by various materials for photon counting detectors is polarization under high-flux X-ray irradiation. To validate the performance of GaAs:Cr, we tested the detector under different X-ray flux, energy spectra, and working bias voltage conditions. This study can help us evaluate the feasibility of GaAs material as a PCD and provide a guide to improve material properties and detector device design.