Exploring the Potential of Silicon Carbide Nanowire Junctionless Field-Effect Transistors for Ultra-Scaled 5 nm Channel Length Applications

Silicon carbide (SiC) nanowire (NW) junctionless field-effect transistors (JLFETs) offer a promising solution due to SiC's superior material properties and the JLFET's inherent advantages in sub 5 nm regime. These transistors can be used to create integrated circuits (ICs) that are smaller and more energy efficient. This study investigates SiC NW JLFETs at the 5 nm scale, evaluating their performance, short channel effects (SCE), and scalability compared to traditional MOSFETs. Simulations and analysis shed light on critical metrics like threshold voltage, on/off current ratio, subthreshold swing, and device optimization avenues.