Advancing Debris-free EUV Light Source Technology with Reduced Visible Light Effect by Cold Cathode Electron Beam (C-Beam) Irradiation

The purpose of this study to develop debris free extreme Ultraviolet (EUV) light source technology for producing next-generation semiconductor devices, offering enhanced resolution and precision. Key feature of this study will be to create efficient EUV radiation with reduced visible light effects and debris free source. This study introduces a novel solution using cold cathode electron beam (C-beam) irradiation to tackle this issue as our approach includes the utilization of mirrors for optimal EUV light reflection, and filters for selective attenuation of visible and UV-A/B/C wavelength and use debris block for debris free EUV source. The authors believe our sophisticated portable EUV source will pave next generation EUV inspection technology