Field Emission Characteristics from Vertical Few-Layer Graphene Growth on Graphite Substrate

The vertical few-layer graphene (FLG) with a 5 mm diameter circular area was synthesized on a graphite substrate using microwave plasma enhanced chemical vapor deposition. The FLG was uniformly synthesized with width of 400-800 nm, height of 1.6-2 µm, thickness of few-layers and with defects. The turn-on field of the FLG is 7.85 V/µm and the maximum current and current density is 700 µA and 89.1 mA/cm
²
respectively for emission area of 1 mm diameter. It provides a new way to prepare FLG with good conductive interface and would benefit for its large current field emission.