Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite Cs₂SnI₆ Thin Film for Low-Power ReRAM

Recent advancement in the artificial intelligence and surge in the availability of complex information have accelerated the exploration of advanced information processing and storage devices. Perovskite-based synapses for memristor application have immense potential to imitate the biological synapses. Herein, all inorganic lead-free Cs
₂
SnI
₆
perovskite is synthesized using CsI and SnI
₂
as precursors by solution process. Cs
₂
SnI
₆
perovskite-based memristors with Al/Cs
₂
SnI
₆
/ITO configuration is investigated for resistive random access memories (ReRAMs). A model to comprehend the resistive switching (RS) behavior is proposed based on intrinsic defects properties and their migration resulting into the conducting path. Al/Cs
₂
SnI
₆
/ITO memristor exhibits the low set voltage and reset voltage with the compliance current of ~10
⁻⁴
A that signifies the low-power (~10
⁻⁴
W) consumption in ReRAM devices. Also, high-resistance state (HRS)/low-resistance state (LRS) ratio, endurance, and retention are found to be ≥10, upto 160 cycles, and 10
⁴
s. The present investigation explores the environment friendly all inorganic lead-free Cs
₂
SnI
₆
perovskite for low-power ReRAM.