Design of High-Power Heterogeneously Integrated III-V-on-Silicon Distributed Feedback Lasers

We designed high-power heterogeneously integrated III-V-on-silicon distributed feedback lasers. The asymmetric grating was introduced onto the silicon waveguide to improve the output power at one side of lasers while maintaining single-mode operation. For heterogeneously integrated quantum well distributed feedback lasers, optimizing the phase-shift position from conventional 0.50 to 0.64, and the duty cycle at one side of the phase-shift from 0.5 to 0.7 with the other side keeping 0.5, the ratio of the optical output power at both sides of lasers is dramatically increased from 1.0 to 7.5, and to 9.2 for heterogeneously integrated quantum dot distributed feedback lasers. This work provides a step forward towards the development of high-power silicon-based light sources.