Research on Single Tube Packaging Technology for High-Power Blue Semiconductor Lasers

A study was conducted on high-power blue semiconductor lasers packaged with AlN and SiC heat sinks of different materials through a combination of simulation and experiment. Thermodynamic analysis of semiconductor lasers with different secondary heat sink materials using simulation software. Simulation results show that due to the lower thermal conductivity of AlN material compared to silicon carbide, the thermal expansion coefficient matches GaN better. The highest temperature of the laser packaged with AlN sub heat sink is 21 K higher than that of SiC sub heat sink, and the maximum stress is
$0.2\times 103$
Gpa lower than that of SiC sub heat sink. Through experiments, it was found that blue light chips packaged with AlN heat sink achieved better optoelectronic parameters, with a maximum optical power of 0.46W higher than SiC heat sink, a slope efficiency of 0.22W/A higher than SiC heat sink, and a thermal resistance of 1.322K/W lower than SiC heat sink. Although SiC material has a higher thermal conductivity and better heat dissipation performance than AlN material, due to the larger difference in thermal expansion coefficient between SiC material and GaN material, larger residual stress is introduced after packaging, resulting in unsatisfactory packaging effect of SiC secondary heat sink. Therefore, when considering the use of secondary heat sink materials with better heat dissipation performance, how to improve the matching of thermal expansion coefficient of secondary heat sink materials with chip materials is also an issue that cannot be ignored.