CVD-prepared PbSe films for mid-IR photodetectors with high detectivity

In order to obtain the layers of lead selenide, in this work we used the Chemical Vapor Deposition (CVD) method, implemented on a setup for the synthesis of chalcogenide structures, which we described in detail in [1–5]. Elementary high-purity lead (5N) and selenium (5N) were used as the starting materials, and high-purity argon was used as a carrier gas. Sensibilization of the resulting films was carried out in two stages: annealing in air and then iodination. The influence of annealing conditions in air and iodination on the surface morphology and photoelectric properties of the final films was studied.