Investigation of the Physical Properties of Doped ZnS Thin Films Manufactured by PVD.

Through physical vapor deposition (PVD) in high vacuum conditions, zinc sulphide (ZnS) thin films were produced, incorporating manganese ($\mathrm{Mn}^{2+}$) as a dopant. Atomic force microscopy (AFM) analysis revealed that $\mathrm{Mn}^{2+}$ played a crucial role in forming a uniform and smooth film structure. Ultraviolet-visible spectroscopy showcased high transparency across the visible spectrum, with the introduction of dopants leading to significant shifts in bandgap energy. Photoluminescence examination unveiled distinctive emission peaks at 385 nm, 448 nm, and 560 nm, characteristic of ZnS bandgap emissions, alongside an additional peak at 600 nm attributed to the novel dopant’s influence. The enhancements induced by doping were evident in both optical and luminescent properties, suggesting promising applications in optoelectronics, light-emitting diodes, and advanced technology.