Buried Heterostructure InAs/InP Quantum Dash Lasers at 1.3 μm

In this paper, we report for the first time, to the best of our knowledge, on buried heterostructure InAs quantum dash (QDash) lasers on InP substrate emitting at 1.3 μm. An optimized growth process was developed on our state-of-the-art gas-source molecular beam epitaxy reactor, enabling the formation of high-density QDashes on InP(100) substrate exhibiting a narrow photoluminescence full-width at half maximum (FWHM) of 68.1 nm (49 meV) at 300 K. Single transverse mode buried heterostructure Fabry-Pérot lasers were fabricated using our well-established buried ridge stripe process. The lasers exhibit low threshold currents, round optical mode with 12° x 13° FWHM beam divergence, flat emission spectrum and spontaneous mode-locking with longitudinal modes beating linewidths down to 30 kHz. These results demonstrate the capability of InAs/InP QDashes to address applications in the telecom O-band, extending the spectral coverage allowed by this material system.