Sb2S3-based resonant non-volatile multilevel optical memory

In this paper, we show the idea of a non-volatile multilevel memory, realized with an optical resonator. The crosssection of the resonator is realized with Si
3
N
4
buried in SiO
2
, with segmented layers of Sb
2
Se
3
periodically deposited above the Silicon Nitride (separated by a thin layer of Silicon Dioxide). Thanks to the programmability of each segment of $\mathrm{Sb}_{2} \mathrm{~S}_{3}$ by means of thermal pulses, a digitalized average effective refractive index along the resonator is obtained. In this way it is possible to obtain a multilevel switch with amplitude reading around a wavelength of 1550 nm.