Photophysical study of 2,3-Diphenyl Quinoxaline thin films for potential applications in optoelectronic devices

2,3-Diphenyl Quinoxaline (DPQ) was deposited as a thin film using physical vapor deposition (PVD) on glass and silicon substrates, and its physical properties were thoroughly examined using various techniques. Atomic force microscopy (AFM) analysis revealed a highly rough surface morphology. Optical properties were assessed through transmittance and absorbance measurements, aiding in determining the band gap energy at 3.34 eV. Photoluminescence (PL) and thermal photoluminescence spectroscopy highlighted the material’s strong emission, with decay time confirming its fluorescence nature. Current-voltage characteristics were studied through implementation in a p-n junction, showcasing DPQ’s suitability as both an electron and hole transporting layer in optoelectronic devices.