Ge-on-Si APD with Diagonal Dual Injection in 45nm SOl SiPh Process

A small form factor high gain Ge-on-Si APD is demonstrated in 45nm silicon photonic technology. The design utilizes dual optical injection to germanium absorption region using a pair of waveguide tapers. For 1550 nm wavelength the device achieves ~14 A/A gain at 3.5V reverse bias