Design of Ga2O3/(AIGa)2O3 Double-Barrier Resonant Tunnelling Diode

In this work, we calculate for the first time the electronic structure, current-density-voltage characteristic and transmission spectrum of novel
$\text{Ga}_{2}\mathrm{O}_{3}/(\text{AlGa})_{2}\mathrm{O}_{3}$
double-barrier resonant tunnelling diodes (RTDs). The performance of RTDs were optimised in terms of barrier thickness and doping level for maximum peak-to-valley ratio and a maximal value of 3.87 was predicted. The simulations also show that the optimal barrier thickness of the analysed
$\text{Ga}_{2}\mathrm{O}_{3}/(\text{Al}_{12}\text{Ga}_{88})_{2}\mathrm{O}_{3}$
double-barrier RTD is 1.6 nm and the optimal doping level is around 8
$10^{17}$
cm
$-3$
. RTDs are considered due to their importance for design of wide-bandgap oxide semiconductor structures with an optimized resonant electron transport mechanism which is of particular interest in designing novel wide-gap oxide-based quantum cascade lasers.