Analysis of Row Hammer and Passing Gate Effect in DRAM Cells by BCAT Structural Design

In this paper, we investigate the impact of structural parameters such as gate angles, fin height through the control of gate overlaps and the distance from fin to source/drain on the row hammer effect (RHE) and passing gate effect (PGE) of DRAM cells. In a DRAM cell, the larger the angle of the gate profile and the lower the overlap height between the fin and gate of the cell transistor, the lower the RHE and PGE. Thus, the influence of adjacent and passing gates on the DRAM cell body potential is a key factor in RHE and PGE, and through optimization, the performance and reliability of DRAM technology can be improved.