Innovative switching mechanism, performance investigations and scaling effects in a-V2O3 based ReRAM devices

This work presents a novel mechanism for 1R a-V
2
O
3
ReRAM cells fabricated with “wall” integration. Non-volatile Resistive Switching (RS) implies a Vanadium (V) depleted zone created during a unique initialisation step – highlighted by simulation, electrical and physicochemical characterisations. This new a-V
2
O
3
based ReRAM features large memory window, high RS speed, excellent scalability and good endurance.