Investigation of Row Hammer and Passing Gate Effects Based on the Work Functions of Dual Gates in DRAM Cells

In this paper, the effect of the work function of the double metal gate inside DRAM cells on the row hammer (RHE) and passing gate effect (PGE) was analyzed. The RHE and PGE were observed to be significantly affected by the work function of the top metal, mainly due to the leakage current (GIDL). Additionally, it was found that the PGE of DRAM cells was also significantly affected by the work function of the bottom metal.