A Nanosheet Oxide Semiconductor FET Using ALD InZnOx Channel

We have fabricated and characterized nanosheet InZnOx (IZO) FETs by ALD for monolithic 3D integration. Thermal stability and composition/thickness dependence on device characteristics are systematically investigated. IZO FETs show high thermal stability at 400 °C and trade-off among mobility, V th , and V th shift under bias stress. IZO FETs show higher mobility, lower V th , and smaller V th shift than previously reported ALD InGaOx (IGO) FETs. This can be due to the difference in oxygen dissociation energy between IZO and IGO. These findings provide insights for process optimization and device design to realize high-performance and high-reliability monolithic 3D integration.