CMOS-integrated near-field sensor for terahertz dielectric spectroscopy

In this research, we present an electronic near-field sensor designed in 180 nm complementary metal-oxide-semiconductor (CMOS) technology, specifically tailored for terahertz dielectric spectroscopy. Our sensor utilizes a unique onchip detection mechanism, which allows to probe the dielectric properties of materials in aqueous solutions. We have achieved superior sensitivity values, positioning our sensor at the forefront of terahertz-related techniques.