Sub-terahertz emitters in BiCMOS technology with fundamental frequencies 250 GHz

We present voltage control oscillators based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental harmonic in a 130 nm SiGe BiCMOS technology. The radiation is out-coupled through the substrate side using a hyper-hemispheric silicon lens. The source is optimized for 250 GHz and radiates up to 0.325 mW of propagating power. We present an experimental study of the dynamical properties of electronic oscillators subjected to feedback radiation with its application for reflection-type coherent imaging.