On the Extreme Scaling of Transistors with Monolayer MOS2 Channel

2D transition metal dichalcogenides (TMDs) show promise for transistor scaling, but their on-scale performance had not been proven yet. This work demonstrates contact length (Lc) scaling while holding a low contact resistance (RC) down to 11 nm. Channel length $(\mathrm{L}_{\text{CH}})$ scaling shows ION can increase down to at least 12 nm with low Rc. The very scaled $(\mathrm{L}_{\text{CH }}=19$ nm and $\mathrm{L}_{\mathrm{C}}=12$ nm) Mos2 transistor with Sb-based metal contact has current density of ~1130 μA/μm at $\mathrm{V}_{\text{DS}}$= 1 V, and a low $\mathrm{R}_{C}$ of ~ 190 Ω.μm. These scaled transistors, processed within a back-end-of-line (BEOL) thermal budget, do not exhibit subthreshold swing (S.S.) degradation or observable drain-induced barrier lowering (DIBL) down to $\mathrm{L}_{\text{CH}}=12\text{nm}$.