Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis

The utilization of Technology Computer-Aided Design (TCAD) tools for the simulation of both conventional and new electronic devices has become a crucial aspect within the semiconductor industry, as well as in academic research. This paper presents a comprehensive overview of our research investigating the impact of random dopant fluctuations on “3nm node” silicon nanosheet field effect transistors (NSFETs) fabricated. Our study employs NESS (Nano-Electronic Software Simulator), the in-house device simulator developed by the Device Modelling Group at the University of Glasgow. The first principle study was performed to calculate the electrical parameter of the material, and later a fully 3-D real Non-equilibrium Green's function (NEGF) simulation was performed to capture the device characteristics.