Skyrmion-Based Transistor Utilizing Dzyaloshinskii-Moriya Interaction Barrier

Magnetic skyrmions represent localized and topologically protected spin configurations, which hold significant interest for both fundamental research and practical applications in future microelectronics. Skyrmion-based electronic devices, such as transistors and logic gates, are regarded as the next generation of electronic technology. In this work, skyrmion-based transistor is proposed that utilizes Dzyaloshinskii-Moriya Interaction (DMI) barrier control via an electric field applied to the middle of the nanotrack. The DMI barrier can be controlled over the gate region by manipulating a voltage, enabling ON and OFF functionality. The proposed transistor has an optimized area of 100 × 32 nm
²
and requires SOT current density 0.2 GA/m
²
to drive the skyrmion, making it energy-efficient and suitable for low-power applications. This functionality replicates a conventional transistor for magnetic devices and can be applied to logic families and memory devices.