A Physics-based Analytical Model for Ballistic InSe Nanotransistors

This paper presents a physics-based model for ballistic field-effect nanotransistors, focusing on devices based on a two-dimensional indium selenide (InSe) channel. Through an analytical solution of the Poisson equation and making use of the Landauer formalism, we derive concise expressions for current-voltage (1- V) and capacitance-voltage (C- V) characteristics. Validation of the resulting curves is performed against numerical simulations and experimental data, demonstrating an excellent agreement.