Effect of Silicon Atom Doping in SiNx Resistive Switching Films

Doping stoichiometric SiNx layers $(\mathrm{x}=[\mathrm{N}]/[\text{Si}]=1.33)$ with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization and dielectric breakdown measurements are used to identify the main switching properties and performance of the fabricated devices and the effect that the Si dopants and annealing temperature have. In addition, impedance spectroscopy measurements revealed the dielectric properties of the silicon nitride films, as well as the ac conductance, which is utilized to identify the conduction mechanisms.