A novel SiC-based light initiated multi-gate semiconductor switch with high turn on velocity

To optimize turn on velocity of the SiC LIMS, we proposed a new structure of LIMS with the optimization n+ layer and multi-light triggered electrode structure of anode, the dimension of the LIMS chip is 5.5 mm $\times$ 5.5 mm. The experiment results show that the saturation laser energy to trigger the prepared SiC LIMS has been decreased from 1.8 mJ to 40μJ, the forward blocking voltage of the prepared SiC LIMSs are able to withstand more than 7000V, the leakage current is about 0.3μA at room temperature, and the output current density can achieve 4.25kA/$\mathrm{cm}^{2}$ (di/dt is larger than $20 \mathrm{kA} / \mu \mathrm{s}$).