A Low Loss SGT IGBT Design

A design scheme of Shielded Gate Trench Insulated Gate Bipolar Transistors (SGT IGBT) is proposed. Using the Sentaurus TCAD tool, the effect of simulation parameters, such as substrate thickness, substrate resistivity, and the injection dose of the carrier storage (CS) layer on the performance of the SGT IGBT is analyzed. The simulation results show that the SGT IGBT optimizes the electric field at the bottom of the trench for better breakdown characteristics, and reduces the Miller capacitance for lower switching losses compared with the trench IGBT structure under the same cell size conditions.