Analysis of QLED’s Optical Performance for Variations in Wavelength and Quantum Dot Radius

This work employs FDTD analysis of QLEDs in relation to conventional OLEDs, with an emphasis on far field light intensity modeling. Our goal is to clarify the mechanisms controlling device performance and offer important insights for the advancement of next-generation QLED technologies by combining theoretical models with practical data. When CdSe is used as the QD material, it is observed that 10nm produces more emission when compared to a normal OLED design. This study investigated how viewing angles affected variations in far-field intensity at a 500 nm operating wavelength. The CdSe-based quantum light-emitting diode (QLED) shifts from 500 nm to 580 nm while keeping the quantum dot (QD) size constant at 10 nm. It is observed that the QLED exhibits a favorable emission rate at 500 nm.