Synthesis of Tantalum Nitride Nanoparticles by Induction Thermal Plasma

Tantalum nitrides attract much attention due to brilliant thermal stability, high dielectric constant, and unique optoelectronic properties. Therefore, tantalum nitrides have been widely applied on many fields, like water splitting catalyst, capacitor, and conductive barrier layer in integrated circuit manufacturing ^[1]. Abundant types of stable phases exist in Ta-N system, like $\mathrm{TaN}_{0.5}, \mathrm{TaN}_{0.8}, \mathrm{TaN}, \mathrm{Ta}_{3} \mathrm{~N}_{5}$, and $\mathrm{Ta}_{5} \mathrm{~N}_{6}{ }^{2}$. Moreover, TaN exhibits two different structures of $\delta$-phase (high temperature phase) and $\varepsilon$-phase (low temperature phase) under different quenching conditions.