Design of Radiation Hardened SRAM Cell with High Speed and Write Stability for Space Applications

The project, titled “Design of Radiation-Hardened SRAM,” focuses on developing robust and reliable Static Random-Access Memory (SRAM) circuits that can withstand the detrimental effects of ionizing radiation in space and other high-radiation environments. The central idea revolves around designing and implementing advanced SRAM architectures and techniques to mitigate radiation-induced errors and ensure data integrity. This involves utilizing radiation-hardened materials, innovative circuit designs, and error correction mechanisms to enhance the overall resilience of SRAM memory cells. The goal is to create SRAM modules that can maintain data integrity and functionality even when exposed to extreme radiation, thereby enabling the reliable operation of critical electronic systems in space exploration, satellite communications, and other radiation-prone applications.