Highly strained InGaAs/GaAs quantum wells obtained by selective epitaxy

The results of experimental studies on semiconductor heterostructures with InGaAs quantum wells $\mathbf{(} \mathbf{9 8 0}-\mathbf{9 9 5 n m}$) grown by selective MOCVD epitaxy are presented. It is shown that the wavelength of photoluminescence varies across the window and depends on the thickness of the waveguide layer.