High power continious wave laser bars emitting at 770-880 nm with 70 % wall-plug efficiency based on Al-free heterostructures

The effective design of (In)G aAsP/AlG aInP/G aAs semiconductor heterostructures grown by MOVPE, which allows to fabricate cw laser bars emitting in the $770-880 \mathrm{~nm}$ spectral range, were developed. It was demonstrated that reduced threshold current density and increased external differential efficiency could be achieved.