Wavelength dependence of transparency current of InGaAs/GaAs quantum well-dot active medium

We report on the experimental study of the wavelength dependence of transparency current of the novel type of quantum-sized heterostructures - InG aAs/G aA s quantum welldots. Using the obtained results, we have studied the population level of the active region of superluminescent diodes based on chirped quantum well-dot layers and showed that at current density of $160 \mathrm{~A} / \mathrm{cm}^{2}$, the low-energy layer is filled with carriers.