Pulsed laser annealing of sulfur hyperdoped silicon prepared by ion implantation

Silicon’s band gap ($\mathbf{1 . 1 2} \mathbf{~ e V}$) limits its near-infrared photon absorption. Silicon hyperdoping creates energy states within the band gap, enabling near-infrared radiation absorption. Ion implantation is an efficient method for hyperdoping, but radiation-induced defects compromise silicon crystallinity. Pulsed laser annealing mitigates induced defects, enhancing material crystallinity. The study investigates the impact of pulsed laser annealing on sulfur hyperdoped silicon properties prepared by ion implantation.