MBE growth and properties of III-V hybrid nanostrucres on silicon for quantum applications

InGaAs quantum dots in AlGaAs nanowires were formed using molecular-beam epitaxy on the silicon surface for the first time. The dependence of the synthesized nanostructures physical properties on growth conditions was studied. The results of optical properties studies showed that photoluminescence spectra from InGaAs quantum dots are observed at room temperature in a wide range of wavelengths from 850 to 1300 nm. Based on experimental data, modeling of the optical properties of the synthesized nanostructures was carried out.