Investigation of microlasers with broken rotational symmetry of the cavity and InGaAs/GaAs quantum well-dots in active region

In this work, we investigate microlasers with InGaAs/GaAs quantum well-dots in the active region with broken rotational symmetry of the cavity. For the first time, lasing at elevated temperatures has been demonstrated for limaçon-and quadrupole-shaped injection microlasers. Deviation of the cavity shape from the circular leads to the directionality of the emission in the lateral direction. The quality factor of structures is estimated to be at least $10^{5}$. The minimum linewidth was found to be $\sim 200 \mathrm{MHz}$. The emitted power in the selected direction increases with increasing deformation parameter and achieves 3 times more than that of the symmetric microcavity in the range of 40 degrees.