Optimization of the energy barrier layer position in 1550 nm high-power laser diodes

The paper discusses the optimization of AlInAs energy barrier layers position in AlGalnAs/AlInAs/InP laser heterostructures at 1550 nm. For the heterostructure design with a single barrier in the p-waveguide, an output optical power of 2W/7A was achieved for a $40 \mu \mathrm{m}$ aperture sample under continuous pumping, which is 1.8 times higher than the result obtained with a barrierless heterostructure.