Site-controlled Ga(Al)As nanostructure arrays emitting at 740 nm

We presents the results of experimental studies of the formation processes and optical properties of ordered arrays of Ga(Al)As nanostructures on $\mathrm{GaAs}(\mathbf{0 0 1})$ substrates with regular arrays of pyramidal-shaped holes. The possibility AIGaAs solid solution on a structured surface decomposes with the formation of low-dimensional structures enriched by the Ga component is demonstrated. We have also shown that the emission wavelength $(740 \mathbf{n m})$ of site-controlled Ga(Al) As nanostructures is practically independent of the patterned surface morphology, while the emission intensity is determined by the effective volume of nanostructures.