Annealing temperature effect on the GaAs nanowire growth on the FIB-modified Si substrate

Inthis work, it was found that in addition to the strong dose dependence of the nanowire parameters grown within the ion beam treatment area, the annealing temperature also has a significant effect. It is shown that an increase of the annealing temperature from 600 to $750^{\circ} \mathrm{C}$ leads, on the one hand, to an increase of the nanowire density up to $\sim 40 \mu \mathrm{m}^{-2}$ at the maximum dose value. On the other hand, this leads to an increase in the proportion of vertically oriented nanowires up to 100%.