Modeling of Ultraviolet-B AlGaN-Based Laser Diode with Polarization Charge Effect

Ultraviolet-B (280-315 nm) AlGaN-based laser diodes are simulated versus the AlN molar fraction for the electron blocking layer on the p-side. Polarization charge effect is included. Basic laser diode characteristics are presented and analyzed. The modeling results indicate that there is an optimum AlN molar fraction where the laser performance can be achieved with improved slope efficiency and reduced threshold current.