Design and structural characteristics of Ga2O3/por-GaAs/mono-GaAs Heterostructures for Advanced MEMS Applications

This study presents the synthesis and comprehensive characterization of a $\mathrm{Ga}_{2} \mathrm{O}_{3} {/}$ por-GaAs/mono-GaAs heterostructure. Utilizing a combination of electrochemical etching and oxygen annealing, we have successfully fabricated a heterostructure that incorporates both crystalline and porous layers. XRD and Raman spectroscopy confirmed the presence of crystalline $\beta-\mathrm{Ga}_{2} \mathrm{O}_{3}$ and GaAs phases, while SEM analysis revealed a highly porous morphology indicative of a complex phase composition. The structural integrity and quality of the heterostructure offer promising implications for MEMS technologies, leveraging the unique properties of the composite materials for enhanced device performance.