A 3-Stage, 51% PAE, High Linearity, 70W X-Band GaN MMIC Power Amplifier

This paper describes a new high-power, high-PAE, 3-stage X-band GaN MMIC power amplifier operating from 7.9 to 8.4 GHz. The PA is fabricated with Qorvo's high performance 150 nm, GaN-on-SiC process technology. Dimensions of the PA die are
$5.66\ \text{mm}\times 6\ \text{mm}\times 0.1\ \text{mm}$
. This PA delivers a typical 73 W(48.7 dBm) saturated power, 51 % power added efficiency(PAE) and 30 dB large signal gain under continuous-wave(CW) condition. It also delivers 36 W linear power with
$\mathrm{IMD3} < -25\text{dBc}$
. It has video bandwidth of more than 200 MHz.