Silicon Waveguide Cross-sectional Dimension Estimation Based on Effective Refractive Index Extraction

We experimentally demonstrate a novel method for acquiring the cross-sectional measurements of silicon-on-insulation (SOI) waveguides. This technique utilizes two micro-rings with distinct perimeters and an algorithm to evaluate the cross-sectional dimensions and the effective refractive index (n
eff
) without resorting to chip cutting. This technique is essential in comprehending the factual output capability of the manufacturing facility, the practical waveguide structure of the SOI chip and the actual performance of the devices on the chip, and is of great importance for future chip design.