Design of U-band Frequency Doubler Based on Schottky Diode MA4E1317

In microwave millimeter wave system, solid-state multipliers are an effective way to realize signal sources. Researchers have also demanded higher performance from frequency multipliers. This paper presents a U-band diplexer based on Schottky varactor diode MA4E1317. Due to the limited excitation power sustained by a single nonlinear device, in order to increase the input power capacity of the multiplier, a double Schottky junction frequency doubling circuit form is used. In this paper, an unbalanced multiplier structure is chosen, two diodes are placed in parallel in the same direction on the microstrip line. RF input and output signals are transmitted in TEM mode, this results in a low impedance at the diode input and facilitates impedance matching. In this paper, the overall model of the diode is partitioned and designed for accurate modeling. The diode packaging material part is taken as the linear region, and the Schottky junction core is taken as the nonlinear region. The main parameters of MA4E1317 diode are calculated by three-point method, and modeled using HFSS and ADS respectively. Frequency doubler uses a 2.92mm coaxial input signal and a WR-19 standard rectangular waveguide output signal. By building a full-scale three-dimensional electromagnetic model of the MA4E1317 diode, and building nonlinear equivalent circuits, the input and output circuits of the frequency multiplier are optimally designed using the field-circuit co-simulation method. The simulation results show that the output power is 11dBm–13.39dBm octave efficiency is 7.8%–10.9% at an input power of 23dBm in the 37.5GHz–55GHz band.